Tcad simulation based device and circuit-level performance analysis of source pocket engineered gasb/si heterojunction vertical tfets

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dc.contributor.author Tripathy, Manas Ranjan
dc.date.accessioned 2023-08-08T06:39:30Z
dc.date.available 2023-08-08T06:39:30Z
dc.date.issued 2020
dc.identifier.other TH828
dc.identifier.uri http://localhost:8080/xmlui/handle/123456789/2520
dc.language.iso en_US en_US
dc.publisher IIT(BHU) Varanasi en_US
dc.subject Tcad simulation based device and circuit-level en_US
dc.subject performance analysis of source pocket engineered en_US
dc.subject gasb/si heterojunction vertical tfets en_US
dc.subject Abstract available in content. en_US
dc.title Tcad simulation based device and circuit-level performance analysis of source pocket engineered gasb/si heterojunction vertical tfets en_US
dc.type Thesis en_US


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