Abstract:
This article reports a solution-processed pentacene/Al Schottky photodiode for ultraviolet (UV) detection. A low-cost dispersion method is used to fabricate the pentacene film on ITO substrates. The surface morphology, crystalline properties, electrical, and optical properties of the pentacene film have been investigated in detail by X-ray diffraction (XRD), AFM, SEM, UV-visible (Vis), and Hall measurements. Also, the UV detection characteristics were studied. The mechanism attributes to a pseudo photovoltage developed at the Schottky junction. The device shows a high sensitivity of 5.7 (372 nm), a detectivity of 1.25 \times 10^{12} Jones (364 nm), and a quantum efficiency of 1502% (362 nm) at 1-V applied bias. This work paves the way for developing future-generation high-performance organic photodetectors suitable for optoelectronic applications. © 1963-2012 IEEE.
