dc.contributor.author |
SANJEEV |
|
dc.contributor.author |
CHAKRABARTI, P. |
|
dc.date.accessioned |
2020-03-16T10:44:44Z |
|
dc.date.available |
2020-03-16T10:44:44Z |
|
dc.date.issued |
2014-09 |
|
dc.identifier.issn |
12303402 |
|
dc.identifier.uri |
http://localhost:8080/xmlui/handle/123456789/767 |
|
dc.description.abstract |
In this paper, simulation studies on an N+-InAs 0.61Sb0.13P0.26/n0-InAs 0.97Sb0.03/P+-InAs0.61Sb 0.13P0.26 double heterostructure laser diode suitable for use as a source in a free space optical communication system at 3.7 μm at room temperature has been presented. The device structure has been characterized in terms of energy band diagram, electric field profile, and carrier concentration profile using ATLAS simulation tool from Silvaco. The current-voltage characteristics of the structure have been estimated taking into account the degeneracy effect. The results of simulation have been validated by the reported experimental results. |
en_US |
dc.description.sponsorship |
One of the authors (Sanjeev) would like to acknowledge the financial support from the Council of Science and Technol− ogy−UP, Lucknow for this work in the form of a research project. |
en_US |
dc.language.iso |
en_US |
en_US |
dc.publisher |
Versita |
en_US |
dc.subject |
ATLAS |
en_US |
dc.subject |
free space optical communication |
en_US |
dc.subject |
laser diode |
en_US |
dc.subject |
mid-infrared |
en_US |
dc.subject |
simulation |
en_US |
dc.title |
ATLAS simulation of a laser diode for free space optical communication (FSOC) in mid-infrared spectral region |
en_US |
dc.type |
Article |
en_US |