Browsing Department of Electrical Engineering by Subject "SiC MOSFET, gate driver, cascode current mirror, propagation delay, EMI"

Browsing Department of Electrical Engineering by Subject "SiC MOSFET, gate driver, cascode current mirror, propagation delay, EMI"

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  • NARESH K. PILL; AVNEET K. CHAUHAN; SANTOSH KUMAR SINGH; XIAOGANG XIONG (Institute of Electrical and Electronics Engineers Inc., 2019-03-03)
    EMI has remained a limiting factor in driving the SiC MOSFETs to its maximum potential and achieving a trade-off between EMI and switching losses is a major challenge for the designers. In this paper, an inductor-less, ...

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