Abstract:
Electronic industries are in constant search of high performance dielectric
materials exhibiting temperature and frequency-stability, colossal permittivity (εr >
1000) and sufficiently low dielectric loss. It facilitates miniaturization of high-energy density storage devices such as Dynamic Random Access Memory (DRAM) devices,
Multi Layer Ceramic Capacitors (MLCC) and many other electronic devices in
automobile and aircraft. Traditional Pb(ZrxTi1-x)O3 and BaTiO3-based ferroelectric
materials exhibit high dielectric properties. However, their dielectric properties are
strongly temperature-dependent due to phase transition at Curie temperature (Tc).
Furthermore, lead-based materials are eco-unfriendly and harmful to health. Hence, it
is necessary to find some non-ferroelectric materials with high dielectric constant to
substitute these traditional materials.
