Abstract:
The key motivation of this thesis is to realize a solvothermal processed, low cost, non-toxic, environment friendly simplest broadband photoconductor structure based on Cu2SnS3 (CTS) QDs. The CTS QDs has been used in the present study as an active material for visible-NIR regions due to its strong absorption coefficient which results from its higher surface to volume ratio. Apart from of having a higher sur face to volume ratio CTS nanostructures have proved their potentiality in the field of visible-NIR photodetection in comparison to traditional highly toxic, rare, and un stable QDs structure like PbS, PbSe, CdTe, HgTe etc. A low-cost photoconduction structure of CTS QDs has been realized on small spaced Ag electrodes to improve the performance of the structure in comparison to previously reported CTS structures not involving QDs nanostructure for broadband photodetection. The fabricated QDs photoconductor suffers from the poor mobility of QDs film resulting from the long insu lating legend over the QDs structure used at the time of synthesis. The poor mobility in the proposed CTS QDs consequences of low responsivity and detectivity, which were improved by integrating this material with ultra-high mobility material graphene
