Structural changes and ferroelectric properties of BiFeO3 - PbTiO3 thin films grown via a chemical multilayer deposition method

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dc.contributor.author Gupta, S.
dc.contributor.author Garg, A.
dc.contributor.author Agrawal, D.C.
dc.contributor.author Bhattacharjee, S.
dc.contributor.author Pandey, D.
dc.date.accessioned 2021-10-07T07:27:41Z
dc.date.available 2021-10-07T07:27:41Z
dc.date.issued 2009
dc.identifier.issn 00218979
dc.identifier.uri http://localhost:8080/xmlui/handle/123456789/1772
dc.description.abstract Thin films of (1-x) BiFeO3 -x PbTiO3 (BF-xPT) with x≈0.60 were fabricated on Pt/Si substrates by chemical solution deposition of precursor BF and PT layers alternately in three different multilayer configurations. These multilayer deposited precursor films upon annealing at 700 °C in nitrogen show pure perovskite phase formation. In contrast with the equilibrium tetragonal structure for the overall molar composition of BF:PT::40:60, we find monoclinic structured BF-xPT phase of MA type. Piezoforce microscopy confirmed ferroelectric switching in the films and revealed different normal and lateral domain distributions in the samples. Room temperature electrical measurements show good quality ferroelectric hysteresis loops with remanent polarization Pr of up to 18 μC/ cm2 and leakage currents as low as 10-7A/ cm2. en_US
dc.description.sponsorship Journal of Applied Physics en_US
dc.language.iso en en_US
dc.relation.ispartofseries Issue 1;Volume 105
dc.subject Ferroelectricity; en_US
dc.subject Phototransistors; en_US
dc.subject Leakage currents; en_US
dc.subject Piezoforce microscopy; en_US
dc.title Structural changes and ferroelectric properties of BiFeO3 - PbTiO3 thin films grown via a chemical multilayer deposition method en_US
dc.type Article en_US


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