dc.contributor.author |
Gupta, S. |
|
dc.contributor.author |
Garg, A. |
|
dc.contributor.author |
Agrawal, D.C. |
|
dc.contributor.author |
Bhattacharjee, S. |
|
dc.contributor.author |
Pandey, D. |
|
dc.date.accessioned |
2021-10-07T07:27:41Z |
|
dc.date.available |
2021-10-07T07:27:41Z |
|
dc.date.issued |
2009 |
|
dc.identifier.issn |
00218979 |
|
dc.identifier.uri |
http://localhost:8080/xmlui/handle/123456789/1772 |
|
dc.description.abstract |
Thin films of (1-x) BiFeO3 -x PbTiO3 (BF-xPT) with x≈0.60 were fabricated on Pt/Si substrates by chemical solution deposition of precursor BF and PT layers alternately in three different multilayer configurations. These multilayer deposited precursor films upon annealing at 700 °C in nitrogen show pure perovskite phase formation. In contrast with the equilibrium tetragonal structure for the overall molar composition of BF:PT::40:60, we find monoclinic structured BF-xPT phase of MA type. Piezoforce microscopy confirmed ferroelectric switching in the films and revealed different normal and lateral domain distributions in the samples. Room temperature electrical measurements show good quality ferroelectric hysteresis loops with remanent polarization Pr of up to 18 μC/ cm2 and leakage currents as low as 10-7A/ cm2. |
en_US |
dc.description.sponsorship |
Journal of Applied Physics |
en_US |
dc.language.iso |
en |
en_US |
dc.relation.ispartofseries |
Issue 1;Volume 105 |
|
dc.subject |
Ferroelectricity; |
en_US |
dc.subject |
Phototransistors; |
en_US |
dc.subject |
Leakage currents; |
en_US |
dc.subject |
Piezoforce microscopy; |
en_US |
dc.title |
Structural changes and ferroelectric properties of BiFeO3 - PbTiO3 thin films grown via a chemical multilayer deposition method |
en_US |
dc.type |
Article |
en_US |