Single spin universal Boolean logic gate

Show simple item record

dc.contributor.author Agarwal, H.
dc.contributor.author Pramanik, S.
dc.contributor.author Bandyopadhyay, S.
dc.date.accessioned 2021-09-27T10:32:49Z
dc.date.available 2021-09-27T10:32:49Z
dc.date.issued 2008-01-23
dc.identifier.issn 13672630
dc.identifier.uri http://localhost:8080/xmlui/handle/123456789/1719
dc.description.abstract Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates, where binary bits are encoded in spin polarizations of single electrons. Here, we show that a linear array of three quantum dots, each containing a single spin polarized electron, and with nearest neighbor exchange coupling, acts as a NAND gate. The energy dissipated during switching this gate is the Landauer-Shannon limit of kTln(1/pi) (T = ambient temperature and pi = intrinsic gate error probability). With present day technology, pi = 10 -9 is achievable above 1K temperature. Even with this small intrinsic error probability, the energy dissipated during switching is only ∼21kT while today's nanoscale transistors dissipate about 40 000-50 000kT when they switch. en_US
dc.description.sponsorship New Journal of Physics en_US
dc.language.iso en en_US
dc.publisher IOP Publishing Ltd and Deutsche Physikalische Gesellschaft en_US
dc.relation.ispartofseries ;Volume 10
dc.subject Charged particles; en_US
dc.subject Logic gates; en_US
dc.subject Boolean logic; en_US
dc.subject Spin dynamics; en_US
dc.title Single spin universal Boolean logic gate en_US
dc.type Article en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search in IDR


Advanced Search

Browse

My Account