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Spin-orbit induced topological insulator (TI), a new type of materials, which are
insulating in bulk but conducting at the surfaces has attracted a large interest in the area of
condensed matter physics. This is due to the gapless edge or spin resolved surface states (SS),
which are topologically protected by time reversal symmetry (TRS). The possibility of Majorana
Fermions, topological superconductivity, novel magnetoelecric quantum states, the absence of
backscattering from nonmagnetic impurities, exciton condensation, magnetic monopole, and
anomalous quantum Hall effect types of exotic properties in TIs are very promising in the
application of spintronic devices and quantum computing.
In Chapter1, an overview of some of the essential properties of these new types of
materials as well as related properties of quantum Hall insulators is given. The purpose of this
chapter was to give an introduction to some of the most important properties and to provide
information on the analogies and differences between the different systems.
In Chapter 2, we have discussed the synthesis process and the different experimental
techniques which have been used to characterize the samples. Information about pure phase of
the sample was obtained from the X-ray diffraction (XRD). We have investigated transport
properties such as electrical resistivity, thermoelectric property, Hall Effect and
magnetoresistance (MR) of the samples using PPMS. Variation of magnetization (M) with
temperature (T) and applied magnetic field (H) are reported. Surface morphology and chemical
states of the constituent elements have been investigated using SEM and XPS analysis. Since we
get only 2D image using SEM, for 3D image we used AFM technique also.
In Chapter 3, we have investigated structural, resistivity, magneto-transport and
magnetic properties of Bi2CuxTe3-x (x=0, 0.03, 0.06) samples. It is also observed that Cu doping
tunes the carrier from n to p type which is attributed due to the TeBi and BiTe antisites effects.
Subnikov de Hass oscillation has been studied. QAHE has been observed in Hall analysis of the
doped samples which was an indication of magnetic ordering in doped samples.
In Chapter 4, structural, resistivity, thermoelectric power, magneto-transport and magnetic
properties of Bi2Cu0.15Te2.85 topological insulators have been investigated. The tuning of charge
carriers from n to p type by Cu doping at Te sites of Bi2Te3 is observed both from Hall effect and
thermoelectric power measurements. In present investigation we have found room temperature
ferromagnetism in x=0.15 sample, additionally, the observed value of MR was as large as 1000%
in x=0.15 sample. Presence of QAHE even at 300K was also supporting the presence of
ferromagnetism in Cu doped sample.
In Chapter 5, electrical resistivity, thermoelectric power, magnetotransport and
magnetization of Zn doped Bi2Te3 Topological Insulator were studied. Electrical conductivity is
enhanced at higher Zn concentration, and the carrier mobility estimated from Hall data reaches a
remarkable value of ~7200 cm2 V-1S-1
. Large positive magnetoresistance (MR~400%) is
observed in high mobility samples. Interestingly, it is found that the coupling between electrical
conductivity and Seebeck coefficient is broken for higher Zn doped Bi2Te3 samples which
effectively enhances the thermoelectric power factor (from 2.1 mW/K2m for Bi2Te3 to 4.64
mW/K2m for Zn doped Bi2Te3).
In Chapter 6, In the present chapter, the magneto-transport and magnetization
measurements of Sb1.90Cu0.10Te3 were performed at different temperatures and different fields.
Magneto-transport measurement at high field indicates the coexistence of both bulk and surface
states whereas magnetization study at high field shows the existence of bulk state.
In chapter 7, structural and magnetic properties of Co doped Sb2Te3 topological
insulators have been investigated. Surface morphology has been studied using scanning electron
microscope (SEM) and atomic force microscope (AFM). X-ray photo electron spectroscopy
(XPS) study reveals the mixed states of Co in Co2+and Co3+. Magnetic study indicates that the
substitution of Co in Sb2Te3 not only tune the materials from diamagnetic to antiferromagnetic
(even at room temperature) but also propose a promising materials for antiferromagnetic TI
which may be useful even for room temperature applications.
In chapter 8, we have discussed conclusion of entire thesis along with the future
prospective of our work. |
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