Phase separation in wurtzite CuIn xGa1−xS2 nanoparticles

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dc.contributor.author Pradeepkumar, M.S.
dc.contributor.author Pal, S.
dc.contributor.author Singh, A.
dc.contributor.author Basu, J.
dc.contributor.author Ahmad, M.I.
dc.date.accessioned 2020-12-03T05:29:25Z
dc.date.available 2020-12-03T05:29:25Z
dc.date.issued 2020-09-01
dc.identifier.issn 00222461
dc.identifier.uri http://localhost:8080/xmlui/handle/123456789/1039
dc.description.abstract It has earlier been reported that that the gallium incorporation in wurtzite CuInS2 (CIS) results in structural distortion, non-homogeneous shape, and distribution of particles. However, a detailed study of the effect of Ga substitution on the structure and morphology has not been reported. Here, we report the synthesis of nanocrystalline CuInxGa1−xS2 (x = 1, 0.7, 0.5, 0.3, and 0) wurtzite particles by solution processing in a nitrogen atmosphere. Structural analyses by X-ray diffraction (XRD) and transmission electron microscopy (TEM) showed that the as-synthesized CuInS2 (CIS) and CuGaS2 (CGS) nanoparticle were single-phase wurtzite structures, whereas CuIn0.7Ga0.3S2, CuIn0.5Ga0.5S2, and CuIn0.3Ga0.7S2 had three wurtzite phases having In-rich, In–Ga, and Ga-rich compositions. The shape of the resulting nanoparticles was either elongated, polygonal, or tadpole depending on the phase composition. In-rich particles had elongated rod-like morphology, the In–Ga particles were irregular hexagonal/equiaxed, while the Ga-rich phase formed with a tadpole morphology. The bandgap of the wurtzite-CuInxGa1−xS2 increased with Ga substitution: from 1.49 eV for CIS to 2.0 eV for CGS. © 2020, Springer Science+Business Media, LLC, part of Springer Nature. en_US
dc.description.sponsorship Department of Science and Technology, Ministry of Science and Technology, India en_US
dc.language.iso en_US en_US
dc.publisher Springer en_US
dc.relation.ispartofseries Journal of Materials Science;Vol. 55 Issue 26
dc.title Phase separation in wurtzite CuIn xGa1−xS2 nanoparticles en_US
dc.type Article en_US


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