A Green Light Sensitive Au/PBTTT-C14/OTS/SiO2/Si/Ag MOS Capacitor

Singh, A.K.; Pandey, A.; Chakrabarti, P.

dc.contributor.author	Singh, A.K.
dc.contributor.author	Pandey, A.
dc.contributor.author	Chakrabarti, P.
dc.date.accessioned	2020-11-27T05:29:44Z
dc.date.available	2020-11-27T05:29:44Z
dc.date.issued	2020-09-01
dc.identifier.issn	10411135
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/1022
dc.description.abstract	The present article demonstrates a simple method to fabricate Au/PBTTT-C14/OTS/SiO2/Si/Ag-based MOS capacitor using the floating transfer method (FTM) for deposition of PBTTT-C14 and investigates the mechanism of high-frequency operation at quasi-static state at room temperature (25°C). The good quality and homogeneous nature of FTM grown film enhance the interface quality of the device. The surface morphology and absorption properties of the fabricated device were characterized by AFM and UV-Visible absorption. The electrical characterization of the MOS device was done by using Au and Ag electrodes. The charge concentration in polymer and interface property of Organic polymer/octadecyl trichlorosilane treated SiO2 have been investigated systematically. The MOS device has been examined under dark and green light (550 nm) illumination. The device exhibits strong responsivity and photosensitivity to green light. © 1989-2012 IEEE.	en_US
dc.language.iso	en_US	en_US
dc.publisher	Institute of Electrical and Electronics Engineers Inc.	en_US
dc.relation.ispartofseries	IEEE Photonics Technology Letters;Vol. 32 Issue 17
dc.subject	Capacitance-voltage	en_US
dc.subject	FTM	en_US
dc.subject	H.F capacitancevoltage	en_US
dc.subject	Quasi-static CV	en_US
dc.subject	PBTTT-C14 MOS	en_US
dc.subject	TFTs	en_US
dc.subject	interface trap density	en_US
dc.title	A Green Light Sensitive Au/PBTTT-C14/OTS/SiO2/Si/Ag MOS Capacitor	en_US
dc.type	Article	en_US