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Volume 10, Issue 8, 1 August 2020, Article number 085313 Lithography-free fabrication of low operating voltage and large channel length graphene transistor with current saturation by utilizing Li+of ion-conducting-oxide gate dielectric
Chourasia, N.K.
;
Singh, V.K.
;
Sharma, A.
;
Srivastava, A.
;
Pal, B.N.
(
American Institute of Physics Inc.
,
2020-08-01
)
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Author
Chourasia, N.K. (1)
Pal, B.N. (1)
Sharma, A. (1)
Singh, V.K. (1)
Srivastava, A. (1)
Subject
Aluminum compounds (1)
Cost effectiveness (1)
Fabrication (1)
Field effect transistors (1)
Gate dielectrics (1)
Graphene (1)
Hole mobility (1)
Lithium compounds (1)
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2020 (1)
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