Jit, S.; Weerasekara, A.B.; Jayasinghe, R.C.; Matsik, S.G.; Perera, A.G.U.; Buchanan, M.; Sproule, G.I.; Liu, H.C.; Stintz, A.; Krishna, S.; Khanna, S.P.; Lachab, M.
(2008)
A heterojunction interfacial workfunction internal photoemission (HEIWIP) terahertz detector with ∼1 × 1018 cm-3 n-type doped GaAs emitters in a multilayer GaAs/Al0.13Ga0.87As heterostructure is presented. The detection ...