Chourasia, N.K.; Sharma, A.; Pal, N.; Biring, S.; Pal, B.N.
(Wiley-VCH Verlag, 2020-10-01)
Herein, dielectric/semiconductor interfacial p-doping is used to develop a high-carrier-mobility and balanced ambipolar tin oxide (SnO2) thin-film transistor (TFT). To introduce this interfacial doping, TFTs are fabricated ...