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Browsing by Author "Chourasia, N.K."

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Dielectric/Semiconductor Interfacial p-Doping: A New Technique to Fabricate Solution-Processed High-Performance 1 V Ambipolar Oxide Transistors

Chourasia, N.K.; Sharma, A.; Pal, N.; Biring, S.; Pal, B.N. (Wiley-VCH Verlag, 2020-10-01)

Herein, dielectric/semiconductor interfacial p-doping is used to develop a high-carrier-mobility and balanced ambipolar tin oxide (SnO2) thin-film transistor (TFT). To introduce this interfacial doping, TFTs are fabricated ...
A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor with NH3Sensing Application

Chourasia, N.K.; Singh, A.K.; Rai, S.; Sharma, A.; Chakrabarti, P.; Srivastava, A.; Pal, B.N. (Institute of Electrical and Electronics Engineers Inc., 2020-10)

Large-area-based field-effect transistor (FET) gas sensor has the potential to provide a larger sensing area for a chemical analyte. So far, graphene FETs (GFETs) are mostly fabricated by expensive lithographic techniques ...
Volume 10, Issue 8, 1 August 2020, Article number 085313 Lithography-free fabrication of low operating voltage and large channel length graphene transistor with current saturation by utilizing Li+of ion-conducting-oxide gate dielectric

Chourasia, N.K.; Singh, V.K.; Sharma, A.; Srivastava, A.; Pal, B.N. (American Institute of Physics Inc., 2020-08-01)

The large channel length graphene field-effect transistor (GFET) can outperform its competitors due to its larger active area and lower noise. Such long channel length devices have numerous applications, e.g., in photodetectors, ...

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